STB30NF10T4 STMicroelectronics, STB30NF10T4 Datasheet - Page 9

• Manufacturer Part Number: STB30NF10T4
• Description: MOSFET N-CH 100V 35A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB30NF10T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 55nC @ 10V
• Input Capacitance (ciss) @ Vds: 1180pF @ 25V
• Power - Max: 115W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.045 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 115000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 15A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 38mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6550-2; STB30NF10T4

STB30NF10 - STP30NF10 - STP30NF10FP
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Figure 15. Switching times test circuit for
Figure 17. Test circuit for inductive load
Figure 19. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 16. Gate charge test circuit
Figure 18. Unclamped Inductive load test
Figure 20. Switching time waveform
circuit
Test circuit
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