STB30NF10T4 STMicroelectronics, STB30NF10T4 Datasheet - Page 4

• Manufacturer Part Number: STB30NF10T4
• Description: MOSFET N-CH 100V 35A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB30NF10T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 55nC @ 10V
• Input Capacitance (ciss) @ Vds: 1180pF @ 25V
• Power - Max: 115W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.045 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 115000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 15A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 38mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6550-2; STB30NF10T4

Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
V
Symbol
Symbol
CASE
R
V
(BR)DSS
g
t
t
I
C
I
C
GS(th)
DS(on)
C
Q
d(on)
d(off)
Q
DSS
GSS
fs
Q
oss
t
t
iss
rss
gs
gd
r
f
(1)
g
=25°C unless otherwise specified)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
T
V
V
V
V
V
V
V
R
(see
V
V
(see
D
C
DS
DS
GS
DS
GS
GS
GS
DS
DS
DD
DD
G
= 250µA, V
= 125°C
Test conditions
= 4.7Ω V
Test conditions
= max ratings
= max ratings,
= ± 20V
= V
= 10V, I
= 15V, I
= 25V, f = 1MHz,
= 0
= 50V, I
= 80V, I
= 10V
Figure
Figure
GS
, I
STB30NF10 - STP30NF10 - STP30NF10FP
D
15)
16)
D
GS
D
D
D
GS
= 15A
= 15A
= 15A
= 12A,
= 250µA
= 10V
=0
Min.
Min.
100
2
0.038
1180
Typ.
Typ.
180
10
80
15
40
45
10
40
15
3
8
0.045
Max.
Max.
±100
55
10
1
4
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
S
V
V
Ω