STB30NF10T4 STMicroelectronics, STB30NF10T4 Datasheet - Page 3

• Manufacturer Part Number: STB30NF10T4
• Description: MOSFET N-CH 100V 35A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB30NF10T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 55nC @ 10V
• Input Capacitance (ciss) @ Vds: 1180pF @ 25V
• Power - Max: 115W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.045 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 115000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 15A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 38mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6550-2; STB30NF10T4

STB30NF10 - STP30NF10 - STP30NF10FP
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area.
2. I
3. Starting T
Table 2.
Rthj-case
Rthj-amb
Symbol
dv/dt
E
SD
I
V
V
DM
V
V
T
P
AS
T
DGR
I
I
T
ISO
GS
≤ 30A, di/dt ≤ 400A/µs, V
DS
stg
D
D
J
tot
j
(1)
(3)
(2)
j
= 25 °C, I
Absolute maximum ratings
Thermal data
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Drain-source voltage (V
Drain-gate voltage (R
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Insulation withstand voltage (DC)
Storage temperature
Max. operating junction temperature
D
= 15A, V
DD
≤ V
DD
Parameter
(BR)DSS
= 30V
C
GS
= 25°C
, Tj ≤ T
GS
= 20 kΩ)
= 0)
JMAX
C
C
= 25°C
= 100°C
TO-220
D
0.77
2
140
115
35
25
PAK
--
-55 to 175
TO-220
D
1.30
Value
2
± 20
100
100
275
PAK
28
TO-220FP
62.5
300
2500
0.2
18
13
72
30
Electrical ratings
TO-220FP
5
W/°C
V/ns
Unit
mJ
°C
W
V
V
V
A
A
A
V
°C/W
°C/W
°C
3/16