NTA4151PT1G ON Semiconductor, NTA4151PT1G Datasheet - Page 5

MOSFET P-CH 20V 760MA SOT-416

NTA4151PT1G

Manufacturer Part Number
NTA4151PT1G
Description
MOSFET P-CH 20V 760MA SOT-416
Manufacturer
ON Semiconductor
Datasheets

Specifications of NTA4151PT1G

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
360 mOhm @ 350mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
760mA
Vgs(th) (max) @ Id
450mV @ 250µA
Gate Charge (qg) @ Vgs
2.1nC @ 4.5V
Input Capacitance (ciss) @ Vds
156pF @ 5V
Power - Max
301mW
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416, EMT3, 3-SSMini
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.36 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
0.4 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.76 A
Power Dissipation
301 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Current, Drain
-760 mA
Gate Charge, Total
2.1 nC
Package Type
SC-75/SOT-416
Polarization
P-Channel
Resistance, Drain To Source On
0.26 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
29 ns
Time, Turn-on Delay
8 ns
Transconductance, Forward
0.5 S
Voltage, Breakdown, Drain To Source
-20 V
Voltage, Forward, Diode
-0.72 V
Voltage, Gate To Source
±6 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTA4151PT1GOSTR

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2 321
0.20 (0.008)
b
3 PL
C
M
D
−E−
3
L
*For additional information on our Pb−Free strategy and soldering
2
1
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
e
H
1.803
0.071
A1
E
−D−
A
0.508
0.020
PACKAGE DIMENSIONS
NTA4151P, NTE4151P
SOLDERING FOOTPRINT*
0.20 (0.008) E
http://onsemi.com
SC−75/SOT−416
CASE 463−01
ISSUE F
5
0.356
0.014
1.000
0.039
SCALE 10:1
0.787
0.031
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: MILLIMETER.
inches
Y14.5M, 1982.
STYLE 5:
mm
DIM
H
A1
PIN 1. GATE
A
C
D
E
b
e
L
E
2. SOURCE
3. DRAIN
MIN
0.70
0.00
0.15
0.10
1.55
0.70
0.10
1.50
MILLIMETERS
1.00 BSC
NOM
0.80
0.05
0.20
0.15
1.60
0.80
0.15
1.60
MAX
0.90
0.10
0.30
0.25
1.65
0.90
0.20
1.70
0.027
0.000
0.006
0.004
0.059
0.027
0.004
0.061
MIN
0.04 BSC
INCHES
0.031
0.002
0.008
0.006
0.063
0.031
0.006
0.063
NOM
0.035
0.004
0.012
0.010
0.067
0.035
0.008
0.065
MAX

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