NTA4151PT1G ON Semiconductor, NTA4151PT1G Datasheet

MOSFET P-CH 20V 760MA SOT-416

NTA4151PT1G

Manufacturer Part Number
NTA4151PT1G
Description
MOSFET P-CH 20V 760MA SOT-416
Manufacturer
ON Semiconductor
Datasheets

Specifications of NTA4151PT1G

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
360 mOhm @ 350mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
760mA
Vgs(th) (max) @ Id
450mV @ 250µA
Gate Charge (qg) @ Vgs
2.1nC @ 4.5V
Input Capacitance (ciss) @ Vds
156pF @ 5V
Power - Max
301mW
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416, EMT3, 3-SSMini
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.36 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
0.4 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.76 A
Power Dissipation
301 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Current, Drain
-760 mA
Gate Charge, Total
2.1 nC
Package Type
SC-75/SOT-416
Polarization
P-Channel
Resistance, Drain To Source On
0.26 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
29 ns
Time, Turn-on Delay
8 ns
Transconductance, Forward
0.5 S
Voltage, Breakdown, Drain To Source
-20 V
Voltage, Forward, Diode
-0.72 V
Voltage, Gate To Source
±6 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTA4151PT1GOSTR

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
NTA4151PT1G
Manufacturer:
ON Semiconductor
Quantity:
74 405
Part Number:
NTA4151PT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTA4151PT1G
Manufacturer:
ON
Quantity:
519
Part Number:
NTA4151PT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
NTA4151PT1G
0
Company:
Part Number:
NTA4151PT1G
Quantity:
90 000
Company:
Part Number:
NTA4151PT1G
Quantity:
2 321
NTA4151P, NTE4151P
Small Signal MOSFET
−20 V, −760 mA, Single P−Channel,
Gate Zener, SC−75, SC−89
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
THERMAL RESISTANCE RATINGS
© Semiconductor Components Industries, LLC, 2006
September, 2006 − Rev. 5
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current
(Note 1)
Power Dissipation (Note 1)
Pulsed Drain Current
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
Gate−to−Source ESD Rating −
Junction−to−Ambient − Steady State (Note 1)
Cameras, etc.
Low R
Small Outline Package (1.6 x 1.6 mm)
SC−75 Standard Gullwing Package
ESD Protected Gate
Pb−Free Packages are Available
High Side Load Switch
DC−DC Conversion
Small Drive Circuits
Battery Operated Systems such as Cell Phones, PDAs, Digital
[1 oz] including traces).
DS(on)
(Human Body Model, Method 3015)
for Higher Efficiency and Longer Battery Life
Parameter
SC−75
SC−89
(T
J
= 25°C unless otherwise stated)
Steady State
Steady State
tp =10 ms
SC−75
SC−89
Symbol
V
T
ESD
R
V
I
T
P
DSS
STG
T
I
DM
I
qJA
GS
D
S
J
D
L
,
±1000
−55 to
Value
−760
−250
1800
±6.0
−20
301
313
150
260
415
400
1
Units
°C/W
mW
mA
mA
mA
°
°C
V
V
V
C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
SC−75 / SOT−416
V
*Date Code orientation may vary depending
(BR)DSS
−20 V
upon manufacturing location.
CASE 463C
(Note: Microdot may be in either location)
CASE 463
STYLE 5
3
3
SC−89
G
ORDERING INFORMATION
xx
M
G
1
1
http://onsemi.com
2
2
P−Channel MOSFET
0.26 W @ −4.5 V
0.35 W @ −2.5 V
0.49 W @ −1.8 V
R
= Device Code
= Date Code*
= Pb−Free Package
DS(on)
Publication Order Number:
MARKING DIAGRAM
& PIN ASSIGNMENT
D
S
TYP
Gate
1
xx M G
Drain
3
G
NTA4151P/D
Source
−760 mA
I
D
2
MAX

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NTA4151PT1G Summary of contents

Page 1

NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • Low R for Higher Efficiency and Longer Battery Life DS(on) • Small Outline Package (1.6 x 1.6 mm) • SC−75 Standard Gullwing Package ...

Page 2

... Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTA4151PT1 NTA4151PT1G NTE4151PT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTA4151P, NTE4151P (T = 25° ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 0.7 0.6 −1 −1. −4 0.4 0.3 0.2 0 0.5 1.0 1.5 2.0 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0 −4.5 ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS 0.4 0.8 1.2 1 TOTAL GATE CHARGE (nC) G Figure 7. Gate−to−Source Voltage vs. Total Gate Charge 1 0.5 0.2 ...

Page 5

... L A1 SOLDERING FOOTPRINT* 1.803 0.071 0.508 0.020 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SC−75/SOT−416 CASE 463−01 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...

Page 6

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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