NTA4151PT1G ON Semiconductor, NTA4151PT1G Datasheet - Page 4
![MOSFET P-CH 20V 760MA SOT-416](/photos/5/30/53066/sc___75-3_463_sml.jpg)
NTA4151PT1G
Manufacturer Part Number
NTA4151PT1G
Description
MOSFET P-CH 20V 760MA SOT-416
Manufacturer
ON Semiconductor
Specifications of NTA4151PT1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
360 mOhm @ 350mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
760mA
Vgs(th) (max) @ Id
450mV @ 250µA
Gate Charge (qg) @ Vgs
2.1nC @ 4.5V
Input Capacitance (ciss) @ Vds
156pF @ 5V
Power - Max
301mW
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416, EMT3, 3-SSMini
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.36 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
0.4 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.76 A
Power Dissipation
301 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Current, Drain
-760 mA
Gate Charge, Total
2.1 nC
Package Type
SC-75/SOT-416
Polarization
P-Channel
Resistance, Drain To Source On
0.26 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
29 ns
Time, Turn-on Delay
8 ns
Transconductance, Forward
0.5 S
Voltage, Breakdown, Drain To Source
-20 V
Voltage, Forward, Diode
-0.72 V
Voltage, Gate To Source
±6 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTA4151PT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTA4151PT1G
Manufacturer:
ON Semiconductor
Quantity:
74 405
Company:
Part Number:
NTA4151PT1G
Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
NTA4151PT1G
Manufacturer:
ON
Quantity:
519
Part Number:
NTA4151PT1G
Manufacturer:
ON/安森美
Quantity:
20 000
5
4
3
2
1
0
0.001
0
0.01
1.0
0.1
Q
Figure 7. Gate−to−Source Voltage vs. Total
GS
0.00001
0.05
0.01
D = 0.5
0.1
0.02
0.2
SINGLE PULSE
0.4
Q
Q
GD
G
, TOTAL GATE CHARGE (nC)
0.8
0.0001
Gate Charge
Q
T
1.2
TYPICAL ELECTRICAL CHARACTERISTICS
0.001
1.6
Figure 9. Normalized Thermal Response
V
I
T
D
A
DS
= −0.3 A
= 25°C
= −10 V
2.0
NTA4151P, NTE4151P
0.01
http://onsemi.com
2.4
t, TIME (s)
4
0.1
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Figure 8. Diode Forward Voltage vs. Current
V
−V
GS
SD
= 0 V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.2
1.0
0.4
T
J
= 125°C
10
0.6
T
J
= 25°C
100
0.8
1000
1.0