NTA4151PT1G ON Semiconductor, NTA4151PT1G Datasheet - Page 4
![MOSFET P-CH 20V 760MA SOT-416](/photos/5/30/53066/sc___75-3_463_sml.jpg)
NTA4151PT1G
Manufacturer Part Number
NTA4151PT1G
Description
MOSFET P-CH 20V 760MA SOT-416
Manufacturer
ON Semiconductor
Specifications of NTA4151PT1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
360 mOhm @ 350mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
760mA
Vgs(th) (max) @ Id
450mV @ 250µA
Gate Charge (qg) @ Vgs
2.1nC @ 4.5V
Input Capacitance (ciss) @ Vds
156pF @ 5V
Power - Max
301mW
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416, EMT3, 3-SSMini
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.36 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
0.4 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.76 A
Power Dissipation
301 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Current, Drain
-760 mA
Gate Charge, Total
2.1 nC
Package Type
SC-75/SOT-416
Polarization
P-Channel
Resistance, Drain To Source On
0.26 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
29 ns
Time, Turn-on Delay
8 ns
Transconductance, Forward
0.5 S
Voltage, Breakdown, Drain To Source
-20 V
Voltage, Forward, Diode
-0.72 V
Voltage, Gate To Source
±6 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTA4151PT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTA4151PT1G
Manufacturer:
ON Semiconductor
Quantity:
74 405
Company:
Part Number:
NTA4151PT1G
Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
NTA4151PT1G
Manufacturer:
ON
Quantity:
519
Part Number:
NTA4151PT1G
Manufacturer:
ON/安森美
Quantity:
20 000
M
K
1
2 PL
G
−X−
A
3
0.08 (0.003)
2
B
C
D
M
−Y−
3 PL
X
Y
J
S
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
N
NTA4151P, NTE4151P
SOLDERING FOOTPRINT*
SC−89, 3 LEAD
CASE 463C−03
−T−
H
ISSUE C
SEATING
PLANE
6
H
G
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
4. 463C−01 OBSOLETE, NEW STANDARD 463C−02.
Y14.5M, 1982.
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
DIM
A
B
C
D
G
H
K
M
N
J
L
S
MIN
1.50
0.75
0.60
0.23
0.10
0.30
1.50
−−−
−−−
MILLIMETERS
0.50 BSC
0.53 REF
1.10 REF
NOM
1.60
0.85
0.70
0.28
0.15
0.40
1.60
−−−
−−−
MAX
1.70
0.95
0.80
0.33
0.20
0.50
1.70
10
10
_
_
0.059
0.030
0.024
0.009
0.004
0.012
0.059
MIN
−−−
−−−
0.020 BSC
0.021 REF
0.043 REF
INCHES
0.063
0.034
0.028
0.011
0.006
0.016
0.063
NOM
−−−
−−−
NTA4151P/D
0.067
0.040
0.031
0.013
0.008
0.020
0.067
MAX
10
10
_
_