NTA4151PT1G ON Semiconductor, NTA4151PT1G Datasheet - Page 2
![MOSFET P-CH 20V 760MA SOT-416](/photos/5/30/53066/sc___75-3_463_sml.jpg)
NTA4151PT1G
Manufacturer Part Number
NTA4151PT1G
Description
MOSFET P-CH 20V 760MA SOT-416
Manufacturer
ON Semiconductor
Specifications of NTA4151PT1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
360 mOhm @ 350mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
760mA
Vgs(th) (max) @ Id
450mV @ 250µA
Gate Charge (qg) @ Vgs
2.1nC @ 4.5V
Input Capacitance (ciss) @ Vds
156pF @ 5V
Power - Max
301mW
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416, EMT3, 3-SSMini
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.36 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
0.4 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.76 A
Power Dissipation
301 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Current, Drain
-760 mA
Gate Charge, Total
2.1 nC
Package Type
SC-75/SOT-416
Polarization
P-Channel
Resistance, Drain To Source On
0.26 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
29 ns
Time, Turn-on Delay
8 ns
Transconductance, Forward
0.5 S
Voltage, Breakdown, Drain To Source
-20 V
Voltage, Forward, Diode
-0.72 V
Voltage, Gate To Source
±6 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTA4151PT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTA4151PT1G
Manufacturer:
ON Semiconductor
Quantity:
74 405
Company:
Part Number:
NTA4151PT1G
Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
NTA4151PT1G
Manufacturer:
ON
Quantity:
519
Part Number:
NTA4151PT1G
Manufacturer:
ON/安森美
Quantity:
20 000
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 3)
DRAIN−SOURCE DIODE CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
NTA4151PT1
NTA4151PT1G
NTE4151PT1G
Parameter
Device
(T
J
V
= 25°C unless otherwise stated)
Symbol
V
Q
R
Q
td
Marking
(BR)DSS
td
C
C
GS(TH)
I
I
C
G(TOT)
Q
Q
DS(on)
V
g
DSS
GSS
G(TH)
(OFF)
OSS
RSS
(ON)
FS
ISS
t
t
TN
TN
TM
GS
GD
SD
r
f
NTA4151P, NTE4151P
V
V
V
V
V
V
I
V
GS
GS
GS
GS
GS
V
V
V
V
DS
D
V
DS
GS
DS
GS
GS
GS
= −200 mA, R
= −4.5 V, V
= −4.5 V, I
= −2.5 V, I
= −1.8 V, I
= −4.5 V, V
= −10 V, I
Test Condition
= V
2
= 0 V, V
= 0 V, I
= 0 V, f = 1.0 MHz,
(Pb−Free)
(Pb−Free)
= 0 V, I
= 0 V, V
Package
V
SC−75
SC−75
SC−89
I
DS
D
GS
= −0.3 A
= −5.0 V
, I
S
D
D
GS
D
DS
D
D
D
= −250 mA
= −250 mA
DD
DD
= −250 mA
= −250 mA
= −350 mA
= −300 mA
= −150 mA
= ±4.5 V
G
= −16 V
= −10 V,
= −10 V,
= 10 W
−0.45
Min
−20
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Shipping
0.125
0.325
−0.72
$1.0
−1.0
0.26
0.35
0.49
20.4
Typ
156
0.4
2.1
0.5
8.0
8.2
28
18
29
†
−100
$10
Max
0.36
0.45
−1.1
1.0
Unit
nA
mA
nC
pF
ns
W
V
V
S
V