BSS223PW L6327 Infineon Technologies, BSS223PW L6327 Datasheet - Page 8

• Manufacturer Part Number: BSS223PW L6327
• Description: MOSFET P-CH 20V 390MA SOT-323
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSS223PW L6327

• Package / Case: SOT-323
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 390mA
• Vgs(th) (max) @ Id: 1.2V @ 1.5µA
• Gate Charge (qg) @ Vgs: 0.62nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 56pF @ 15V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1.2 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.39 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BSS223PW; BSS223PWINTR; BSS223PWL6327; BSS223PWL6327XT; BSS223PWXT; BSS223PWXTINTR; BSS223PWXTINTR; SP000245423

BSS 223PW
Preliminary data
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2002-07-04
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