BSS223PW H6327 Infineon Technologies, BSS223PW H6327 Datasheet
BSS223PW H6327
Specifications of BSS223PW H6327
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BSS223PW H6327 Summary of contents
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OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (2.5 V rated) 150°C operating temperature Avalanche rated dv/dt rated Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Type Package BSS 223PW PG-SOT-323 Maximum Ratings Parameter ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient, leaded Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage V =0, I =-250µ Gate threshold voltage =-1.5µA D ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...
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Power dissipation tot A BSS 223PW 0.28 W 0.24 0.22 0.2 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0. Safe operating area ...
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Typ. output characteristic parameter =25° 0.5 10V 0.4 0.3 0.2 0 0.3 0.6 7 Typ. transfer characteristics ...
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Drain-source on-resistance DS(on) parameter -0. 1.6 1.2 1 0.8 0.6 0.4 0.2 0 -60 - Typ. capacitances parameter: V =0, ...
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Typ. avalanche energy par - 0.8 0.6 0.4 0 100 15 ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...