BSS223PW L6327 Infineon Technologies, BSS223PW L6327 Datasheet - Page 6

• Manufacturer Part Number: BSS223PW L6327
• Description: MOSFET P-CH 20V 390MA SOT-323
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSS223PW L6327

• Package / Case: SOT-323
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 390mA
• Vgs(th) (max) @ Id: 1.2V @ 1.5µA
• Gate Charge (qg) @ Vgs: 0.62nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 56pF @ 15V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1.2 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.39 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BSS223PW; BSS223PWINTR; BSS223PWL6327; BSS223PWL6327XT; BSS223PWXT; BSS223PWXTINTR; BSS223PWXTINTR; SP000245423

9 Drain-source on-resistance
R
parameter: I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
pF
10
10
1.6
1.2
0.8
0.6
0.4
0.2
1
0
-60
2
1
0
DS
= f(T j )
)
2
D
-20
GS
= -0.39 A, V
=0, f=1 MHz; T j = 25 °C
4
20
6
8
60
GS
98%
typ.
10
= -4.5 V
100
12
°C
C
C
C
T
-V
V
iss
oss
rss
Preliminary data
j
DS
160
15
Page 6
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j
F
GS(th)
= f (V
-10
-10
-10
-10
1.6
1.2
0.8
0.6
0.4
0.2
A
V
-1
-2
1
0
-60
1
0
0
= f (T j )
SD
BSS 223PW
)
-0.4
-20
GS
-0.8
= V
20
DS
-1.2
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
2%
-1.6
60
typ.
98%
BSS 223PW
-2
100
2002-07-04
-2.4
°C
V
V
T
SD
j
160
-3