STY60NM50 STMicroelectronics, STY60NM50 Datasheet - Page 5
![MOSFET N-CH 500V 60A MAX247](/photos/5/30/53064/max247_sml.jpg)
STY60NM50
Manufacturer Part Number
STY60NM50
Description
MOSFET N-CH 500V 60A MAX247
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STY60NM50.pdf
(8 pages)
Specifications of STY60NM50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
50 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
266nC @ 10V
Input Capacitance (ciss) @ Vds
7500pF @ 25V
Power - Max
560W
Mounting Type
Through Hole
Package / Case
MAX247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.05 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
60 A
Power Dissipation
560000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2775-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STY60NM50
Manufacturer:
ST
Quantity:
12 500
Part Number:
STY60NM50FD
Manufacturer:
ST
Quantity:
20 000
STY60NM50
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8