STY60NM50 STMicroelectronics, STY60NM50 Datasheet - Page 2

• Manufacturer Part Number: STY60NM50
• Description: MOSFET N-CH 500V 60A MAX247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STY60NM50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 266nC @ 10V
• Input Capacitance (ciss) @ Vds: 7500pF @ 25V
• Power - Max: 560W
• Mounting Type: Through Hole
• Package / Case: MAX247™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.05 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 60 A
• Power Dissipation: 560000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2775-5

STY60NM50
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2/8
Rthj-case
Rthj-amb
V
Symbol
Symbol
Symbol
Symbol
R
V
(BR)DSS
g
I
C
I
E
GS(th)
DS(on)
C
C
fs
I
DSS
GSS
R
AR
T
oss
AS
iss
rss
(1)
G
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Input Resistance
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Parameter
Parameter
Parameter
j
DS
= 25 °C, I
= 0)
GS
= 0)
D
= I
j
max)
AR
Parameter
, V
DD
I
V
V
V
V
V
V
I
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
D
D
V
= 35 V)
DS
DS
GS
DS
GS
DS
DS
= 250 µA, V
= 30A
= Max Rating
= Max Rating, T
= V
> I
= ± 20V
= 10V, I
= 25V, f = 1 MHz, V
D(on)
Test Conditions
Test Conditions
Test Conditions
GS
, I
x R
D
D
= 30A
GS
= 250µA
DS(on)max,
Max
Max
= 0
C
= 125 °C
GS
= 0
Min.
Min.
Min.
500
3
0.22
300
30
Max Value
0.045
7500
Typ.
Typ.
Typ.
1.4
980
200
30
1.5
35
4
Max.
Max.
Max.
0.05
± 10
100
10
5
°C/W
°C/W
Unit
Unit
Unit
Unit
°C
µA
µA
µA
pF
pF
pF
A
J
V
V
S