STY60NM50 STMicroelectronics, STY60NM50 Datasheet - Page 3

• Manufacturer Part Number: STY60NM50
• Description: MOSFET N-CH 500V 60A MAX247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STY60NM50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 266nC @ 10V
• Input Capacitance (ciss) @ Vds: 7500pF @ 25V
• Power - Max: 560W
• Mounting Type: Through Hole
• Package / Case: MAX247™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.05 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 60 A
• Power Dissipation: 560000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2775-5

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Safe Operating Area
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
I
SD
r(Voff)
Q
d(on)
Q
RRM
RRM
I
2. Pulse width limited by safe operating area.
Q
Q
Q
SD
t
t
t
t
t
rr
rr
gs
gd
c
r
f
g
rr
rr
(1)
(2)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
V
R
(see test circuit, Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
I
V
(see test circuit, Figure 5)
V
R
(see test circuit, Figure 5)
SD
SD
SD
DD
DD
GS
DD
DD
G
DD
G
= 4.7
= 4.7
= 60A, V
= 60A, di/dt = 100A/µs,
= 60A, di/dt = 100A/µs,
= 250V, I
= 400V, I
= 10V
= 100 V, T
= 100 V, T
= 400V, I
Test Conditions
Test Conditions
Test Conditions
V
V
GS
GS
GS
D
D
D
j
j
= 30A
= 60A,
= 60A,
= 10V
= 0
= 25°C
= 150°C
= 10V
Thermal Impedance
Min.
Min.
Min.
Typ.
Typ.
Typ.
13.4
190
532
636
108
9.9
51
58
53
97
51
46
37
42
Max.
Max.
Max.
266
240
1.5
60
STY60NM50
Unit
Unit
Unit
nC
nC
nC
µC
µC
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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