STY60NM60 STMicroelectronics, STY60NM60 Datasheet - Page 8

MOSFET N-CH 600V 60A MAX247

STY60NM60

Manufacturer Part Number
STY60NM60
Description
MOSFET N-CH 600V 60A MAX247
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STY60NM60

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
55 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
266nC @ 10V
Input Capacitance (ciss) @ Vds
7300pF @ 25V
Power - Max
560W
Mounting Type
Through Hole
Package / Case
MAX247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.05 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
60 A
Power Dissipation
560 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3268-5

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Part Number
Manufacturer
Quantity
Price
Part Number:
STY60NM60
Manufacturer:
JRC
Quantity:
5 000
Part Number:
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Manufacturer:
ST
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STY60NM60
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