STY60NM60 STMicroelectronics, STY60NM60 Datasheet - Page 2

• Manufacturer Part Number: STY60NM60
• Description: MOSFET N-CH 600V 60A MAX247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STY60NM60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 55 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 266nC @ 10V
• Input Capacitance (ciss) @ Vds: 7300pF @ 25V
• Power - Max: 560W
• Mounting Type: Through Hole
• Package / Case: MAX247™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.05 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 60 A
• Power Dissipation: 560 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3268-5

STY60NM60
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
(1) I
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/8
V
Rthj-case
Rthj-amb
Symbol
Symbol
Symbol
dv/dt (1)
SD
BV
ESD(G-S)
I
V
DM
P
V
V
E
T
I
DGR
TOT
I
I
AR
T
T
stg
DS
GS
AS
GSO
D
D
60A, di/dt 400 A/µs, V
j
l
( )
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Gate-Source Breakdown
Voltage
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Gate source ESD(HBM-C=100pF, R=15K
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Parameter
j
= 25 °C, I
DD
V
(BR)DSS
D
C
Parameter
Parameter
GS
= I
= 25°C
, T
GS
j
= 20 k )
max)
AR
j
= 0)
, V
T
JMAX.
DD
C
C
Igs=± 1mA (Open Drain)
= 25°C
= 100°C
= 35 V)
Test Conditions
Max
Max
Min.
Max Value
30
–65 to 150
0.22
Value
300
1.4
37.8
30
30
600
600
±30
240
560
150
4.5
60
15
6
Typ.
Max.
°C/W
°C/W
W/°C
Unit
Unit
Unit
V/ns
°C
KV
°C
°C
A
V
W
J
V
V
V
A
A
A