STY60NM60 STMicroelectronics, STY60NM60 Datasheet - Page 6

• Manufacturer Part Number: STY60NM60
• Description: MOSFET N-CH 600V 60A MAX247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STY60NM60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 55 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 266nC @ 10V
• Input Capacitance (ciss) @ Vds: 7300pF @ 25V
• Power - Max: 560W
• Mounting Type: Through Hole
• Package / Case: MAX247™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.05 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 60 A
• Power Dissipation: 560 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3268-5

STY60NM60
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit