STW26NM50 STMicroelectronics, STW26NM50 Datasheet - Page 4

• Manufacturer Part Number: STW26NM50
• Description: MOSFET N-CH 500V 30A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW26NM50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 106nC @ 10V
• Input Capacitance (ciss) @ Vds: 3000pF @ 25V
• Power - Max: 313W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.12 Ohms @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 30 A
• Power Dissipation: 313000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3264-5

Electrical characteristics
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4/12
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
2. C
Table 7.
C
V
Symbol
Symbol
Symbol
R
CASE
V
oss eq.
(BR)DSS
I
g
increases from 0 to 80% V
t
t
I
C
GS(th)
DS(on)
C
C
Q
Q
d(on)
d(off)
DSS
GSS
Q
fs
oss eq.
t
oss
t
rss
iss
gd
gs
r
f
(1)
g
= 25 °C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
Capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
On/off states
Dynamic
Switching times
Parameter
Parameter
Parameter
DS
= 0)
DS
GS
= 0)
Doc ID 8291 Rev 11
V
V
V
V
V
V
(see Figure 15)
I
V
V
V
V
V
V
R
(see Figure 15)
D
DS
DS
GS
GS
DD
GS
GS
GS
DS
DS
DS
DD
G
= 250 µA, V
=15 V, I
= 4.7 Ω , V
= 25 V, f = 1 MHz,
= 0
= 0, V
= 10 V,
= 400 V, I
= Max rating
= Max rating, T
= ± 20 V
= V
= 10 V, I
= 250 V, I
Test conditions
Test conditions
Test conditions
GS
DS
, I
D
D
=13 A
D
= 0 to 400 V
GS
D
GS
= 250 µA
D
= 13 A
= 26 A,
=10 V,
= 13 A,
= 0
C
=125 °C
Min.
Min. Typ.
500
Min.
3
-
-
-
-
-
0.10
3000
Typ.
700
300
Typ. Max. Unit
20
50
76
20
36
4
28
15
13
19
oss
STW26NM50
when V
Max.
± 10
0.12
Max. Unit
100
10
5
-
-
-
-
-
DS
Unit
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
S