STW26NM50 STMicroelectronics, STW26NM50 Datasheet - Page 10
STW26NM50
Manufacturer Part Number
STW26NM50
Description
MOSFET N-CH 500V 30A TO-247
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STW26NM50.pdf
(12 pages)
Specifications of STW26NM50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
120 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
106nC @ 10V
Input Capacitance (ciss) @ Vds
3000pF @ 25V
Power - Max
313W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.12 Ohms @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
30 A
Power Dissipation
313000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3264-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STW26NM50
Manufacturer:
ALLEGRO
Quantity:
1 001
Package mechanical data
10/12
Dim.
øR
A1
øP
b1
b2
L1
L2
D
A
E
S
b
c
e
L
Doc ID 8291 Rev 11
19.85
15.45
14.20
TO-247 mechanical data
Min.
4.85
2.20
0.40
3.70
3.55
4.50
1.0
2.0
3.0
18.50
mm.
Typ.
5.45
5.50
20.15
15.75
14.80
Max.
5.15
2.60
1.40
2.40
3.40
0.80
4.30
3.65
5.50
STW26NM50