STW75NF30 STMicroelectronics, STW75NF30 Datasheet - Page 5

MOSFET N-CH 300V 60A TO-247

STW75NF30

Manufacturer Part Number
STW75NF30
Description
MOSFET N-CH 300V 60A TO-247
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STW75NF30

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
164nC @ 10V
Input Capacitance (ciss) @ Vds
5930pF @ 25V
Power - Max
320W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.045 Ohm @ 10 V
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
60 A
Power Dissipation
320 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
30A
Drain Source Voltage Vds
300V
On Resistance Rds(on)
37mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8463-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STW75NF30
Manufacturer:
ST
Quantity:
20 000
STW75NF30
Table 6.
Table 7.
1. Pulse with limited by maximum temperature
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
d(on)
d(off)
RRM
RRM
I
SD
Q
Q
t
SD
t
t
t
r
f
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
I
I
di/dt = 100 A/µs
(see Figure 19)
I
di/dt = 100 A/µs
T
V
R
(see Figure 14)
SD
SD
SD
j
DD
G
= 150°C
= 4.7 Ω, V
= 60 A, V
= 60 A,V
=60 A, V
= 150 V, I
Test conditions
Test conditions
(see Figure 19)
DD
DD
GS
GS
D
= 60 V
= 60 V
= 30 A
= 0
= 10 V,
Min.
Min.
Electrical characteristics
Typ.
23.2
Typ.
252
316
115
141
101
2.5
3.7
20
87
Max.
Max.
240
1.6
60
Unit
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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