STW75NF30 STMicroelectronics, STW75NF30 Datasheet - Page 4

• Manufacturer Part Number: STW75NF30
• Description: MOSFET N-CH 300V 60A TO-247
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STW75NF30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 164nC @ 10V
• Input Capacitance (ciss) @ Vds: 5930pF @ 25V
• Power - Max: 320W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.045 Ohm @ 10 V
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 320 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 30A
• Drain Source Voltage Vds: 300V
• On Resistance Rds(on): 37mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8463-5

Electrical characteristics
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Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
CASE
V
oss eq.
(BR)DSS
g
C
I
I
increases from 0 to 80% V
DS(on)
C
C
GS(th)
Q
Q
R
DSS
GSS
Q
fs
oss
oss eq.
rss
iss
gs
gd
G
(1)
g
=25°C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as Coss when V
Forward transconductance
Input capacitance
Output capacitance
Reverse Transfer
Capacitance
Equivalent output
capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
f = 1 MHz open drain
V
V
V
V
V
V
(see Figure 15)
I
V
V
V
V
V
D
GS
GS
DS
DS
DS
DD
DS
DS
DS
DS
GS
= 1 mA, V
= 10 V, I
= 240 V, I
= 10 V
= 15 V
= 25 V, f = 1 MHz,
= 0
= 0 to 240 V, V
= Max rating,
= Max rating @125 °C
= ± 20 V
= V
Test conditions
Test conditions
GS
, I
,
I
D
D
GS
D
= 30 A
D
= 250 µA
= 30 A
= 0
= 30 A,
GS
= 0
Min.
Min.
300
2
0.037
5930
Typ.
Typ.
1.55
837
110
462
164
40
36
69
3
0.045
STW75NF30
Max.
±100
Max.
10
1
4
DS
Unit
Unit
nC
nC
nC
pF
pF
pF
pF
µA
µA
nA
S
Ω
Ω
V
V