STW75NF30 STMicroelectronics, STW75NF30 Datasheet - Page 3

• Manufacturer Part Number: STW75NF30
• Description: MOSFET N-CH 300V 60A TO-247
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STW75NF30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 164nC @ 10V
• Input Capacitance (ciss) @ Vds: 5930pF @ 25V
• Power - Max: 320W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.045 Ohm @ 10 V
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 320 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 30A
• Drain Source Voltage Vds: 300V
• On Resistance Rds(on): 37mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8463-5

STW75NF30
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area
2. I
Table 2.
Table 3.
Symbol
Symbol
R
Symbol
dv/dt
R
I
SD
P
DM
Tstg
V
thj-case
V
thj-amb
E
T
I
I
TOT
I
GS
T
DS
AR
D
D
AS
≤ 60A, di/dt ≤ 200A/µs, V
J
(1)
l
(2)
Absolute maximum ratings
Thermal resistance
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Derating factor
Peak diode recovery voltage slope
Total dissipation at T
Operating junction temperature
Storage temperature
Avalanche characteristics
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
J
= 25 °C, I
DD
Parameter
Parameter
Parameter
≤ 80% V
C
D
= 25 °C
GS
= I
J
AR
max)
= 0)
(BR)DSS
, V
C
C
DD
= 25 °C
= 100 °C
= 50 V)
Max. value
-55 to 150
Value
Value
± 20
37.8
2.56
0.39
300
240
320
300
400
60
12
50
50
Electrical ratings
W/°C
°C/W
°C/W
V/ns
Unit
Unit
Unit
°C
W
°C
mJ
V
V
A
A
A
A
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