STW20NM60FD STMicroelectronics, STW20NM60FD Datasheet - Page 5

• Manufacturer Part Number: STW20NM60FD
• Description: MOSFET N-CH 600V 20A TO-247
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STW20NM60FD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 214W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.26ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.29 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 214 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5415-5; STW20NM60FD

STF20NM60D - STP20NM60FD - STW20NM60FD
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Symbol
Symbol
I
V
t
SDM
t
r(Voff)
I
I
d(on)
SD
RRM
RRM
I
Q
Q
t
t
SD
t
t
t
c
r
f
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Cross-over time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
(see Figure 16)
V
R
(see Figure 16)
I
I
di/dt =100A/µs,V
(see Figure 21)
I
di/dt =100A/µs,V
(see Figure 21)
SD
SD
SD
DD
DD
G
G
= 4.7Ω V
= 4.7Ω, V
= 20 A, V
= 20 A, T
= 20 A, T
Test conditions
Test conditions
= 300V, I
= 480 V, I
GS
GS
j
j
GS
D
= 25°C
= 150°C
D
= 10A
= 10V
= 20A,
= 0
= 10V
DD
DD
=60V
=60V
Electrical characteristics
Min.
Min
1800
2960
Typ.
Typ.
240
396
25
12
22
30
16
20
8
Max. Unit
Max
1.5
20
80
Unit
nC
nC
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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