STW20NM60FD STMicroelectronics, STW20NM60FD Datasheet - Page 3

• Manufacturer Part Number: STW20NM60FD
• Description: MOSFET N-CH 600V 20A TO-247
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STW20NM60FD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 214W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.26ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.29 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 214 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5415-5; STW20NM60FD

STF20NM60D - STP20NM60FD - STW20NM60FD
1
Electrical ratings
Table 1.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 2.
Table 3.
Symbol
Rthj-case Thermal resistance junction-case Max
dv/dt
Rthj-amb Thermal resistance junction-ambient Max
Symbol
Symbol
I
V
DM
P
V
V
V
T
E
DGR
I
TOT
SD
I
I
T
ISO
GS
AR
DS
stg
D
D
T
AS
j
(2)
l
(3)
< 20A, di/dt < 400A/µs, V
Drain-source voltage (V
Drain-gate voltage (R
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Insulation withstand voltage (DC)
Operating junction temperature
Storage temperature
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Maximum lead temperature for soldering
purpose
Absolute maximum ratings
Thermal resistance
Avalanche data
j
= 25 °C, I
Parameter
Parameter
DD
C
= 80%V
GS
D
= 25°C
Parameter
= I
GS
= 20 kΩ)
j
max)
AR
= 0)
(BR)DSS
, V
C
C
DD
= 25°C
= 100°C
= 35 V)
TO-220
TO-220
0.65
12.6
1.20
192
80
20
-
62.5
– 65 to 150
TO-220FP
TO-220FP TO-247
Value
Value
± 30
600
600
12.6
20
300
2.8
20
80
2500
0.36
45
(1)
(1)
Value
(1)
700
10
Electrical ratings
TO-247
0.585
12.6
1.42
214
30
20
80
-
W/°C
°C/W
°C/W
Unit
V/ns
Unit
Unit
mJ
°C
°C
W
°C
V
V
V
A
A
A
V
A
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