STW20NM60FD STMicroelectronics, STW20NM60FD Datasheet - Page 4

• Manufacturer Part Number: STW20NM60FD
• Description: MOSFET N-CH 600V 20A TO-247
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STW20NM60FD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 214W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.26ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.29 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 214 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5415-5; STW20NM60FD

Electrical characteristics
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Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2. C
C
V
Symbol
CASE
Symbol
R
oss eq.
V
(BR)DSS
g
increases from 0 to 80%
C
I
I
DS(on)
C
C
GS(th)
Q
Q
R
DSS
GSS
fs
Q
oss eq.
oss
rss
iss
gs
gd
G
(1)
g
=25°C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance V
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
On/off states
Dynamic
Drain-source breakdown
voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Parameter
Parameter
DS
= 0)
GS
= 0)
STF20NM60D - STP20NM60FD - STW20NM60FD
I
V
V
V
V
V
V
I
V
f=1 MHz Gate DC Bias = 0
Test signal level = 20mV
open drain
V
V
(see Figure 17)
D
D
GS
GS
DS
DS
DS
DS
DS
GS
DD
GS
= 250µA, V
= 10A
= Max rating, T
= Max rating
= ±30V
= V
= 10V, I
> I
= 25V, f = 1 MHz, V
= 0V, V
= 10V
= 480V, I
Test conditions
Test conditions
D(on)
GS
, I
DS
D
x R
D
D
GS
= 10A
= 250µA
= 0V to 480V
= 20A,
DS(on)max,
= 0
C
= 125 °C
GS
= 0
Min
Min
600
3
1300
0.26 0.29
Typ Max Unit
Typ Max Unit
500
190
2.7
35
37
10
17
oss
4
9
when V
±10
52
10
1
0
5
DS
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
S
Ω
V
V
Ω