STP30NM30N STMicroelectronics, STP30NM30N Datasheet - Page 6

• Manufacturer Part Number: STP30NM30N
• Description: MOSFET N-CH 300V 30A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP30NM30N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 75nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 50V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 30A
• Drain Source Voltage Vds: 300V
• On Resistance Rds(on): 0.075ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.09 Ohm @ 10 V
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 160000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7521-5; STP30NM30N

Electrical characteristics
2.1
6/12
Figure 1.
Figure 3.
Figure 5.
Safe operating area
Output characteristics
Normalized B
Electrical characteristics (curves)
VDSS
vs temperature
Figure 2.
Figure 4.
Figure 6.
Thermal impedance
Transfer characteristics
Static drain-source on resistance
STP30NM30N