STP30NM30N STMicroelectronics, STP30NM30N Datasheet
STP30NM30N
Specifications of STP30NM30N
STP30NM30N
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STP30NM30N Summary of contents
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... Application ■ Switching application Order code Part number STP30NM30N April 2007 N-channel 300V - 0.078Ω - 30A - TO-220 R I DS(on) D <0.090Ω 30A Internal schematic diagram Marking P30NM30N Rev 1 STP30NM30N TO-220 Package Packaging TO-220 Tube 1/12 www.st.com 12 ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ STP30NM30N ...
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... STP30NM30N 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Derating factor dv/dt Peak diode recovery voltage slope T Operating junction temperature j T Storage temperature stg 1 ...
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... MHz f=1MHz Gate DC Bias=0 Test signal level=20mV open drain V = 240V 10V GS (see Figure 13) Min. Typ 300 =125° 250µ 0.075 Min. Typ. 9 2500 = 0 500 GS 70 1.7 = 30A STP30NM30N Max. Unit V 1 µA 100 µA 100 Ω 0.090 Max. Unit Ω ...
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... STP30NM30N Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off-delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1 ...
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... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characteristics Figure 5. Normalized B VDSS 6/12 Figure 2. Figure 4. vs temperature Figure 6. STP30NM30N Thermal impedance Transfer characteristics Static drain-source on resistance ...
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... STP30NM30N Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature 7/12 ...
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... Test circuits Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/12 Figure 13. Gate charge test circuit Figure 15. Unclamped inductive load test circuit Figure 17. Switching time waveform STP30NM30N ...
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... STP30NM30N 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...
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... STP30NM30N inch Min Typ Max 0.173 0.181 0.024 0.034 0.044 0.066 0.019 0.027 0.6 0.62 0.050 0.393 0.409 0.094 0.106 0.194 0.202 0.048 ...
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... STP30NM30N 5 Revision history Table 8. Revision history Date 16-Apr-2007 Revision 1 First release Revision history Changes 11/12 ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STP30NM30N ...