STP30NM30N STMicroelectronics, STP30NM30N Datasheet - Page 3

MOSFET N-CH 300V 30A TO-220

STP30NM30N

Manufacturer Part Number
STP30NM30N
Description
MOSFET N-CH 300V 30A TO-220
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STP30NM30N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
75nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 50V
Power - Max
160W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
30A
Drain Source Voltage Vds
300V
On Resistance Rds(on)
0.075ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Configuration
Single
Resistance Drain-source Rds (on)
0.09 Ohm @ 10 V
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
30 A
Power Dissipation
160000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7521-5
STP30NM30N

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP30NM30N
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP30NM30N
Manufacturer:
ST
0
Part Number:
STP30NM30N
Manufacturer:
ST
Quantity:
20 000
Part Number:
STP30NM30N.
Manufacturer:
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STP30NM30N
1
Electrical ratings
Table 1.
1. I
Table 2.
Table 3.
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Symbol
Symbol
Symbol
I
P
DM
dv/dt
V
V
E
T
SD
I
I
I
TOT
T
AR
DS
GS
stg
AS
D
D
j
(1)
< 30A, di/dt < 400A/µs, V
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
Absolute maximum ratings
Thermal data
Avalanche characteristics
j
= 25°C, I
DD
Parameter
Parameter
=80%V
Parameter
D
C
= I
= 25°C
GS
j
AR
max)
(BRDSS)
= 0)
, V
DD
C
C
= 25°C
= 100°C
= 50V)
Max value
-65 to 150
Value
Value
± 20
18.5
1.28
0.78
62.5
900
300
120
160
18
15
30
Electrical ratings
W/°C
°C/W
°C/W
Unit
V/ns
Unit
Unit
mJ
°C
W
A
A
A
A
V
V
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