STB25NM50N-1 STMicroelectronics, STB25NM50N-1 Datasheet - Page 8
![MOSFET N-CH 500V 22A I2PAK](/photos/1/39/13917/497-i2_pak__to-262_sml.jpg)
STB25NM50N-1
Manufacturer Part Number
STB25NM50N-1
Description
MOSFET N-CH 500V 22A I2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB25NM50N-1.pdf
(18 pages)
Specifications of STB25NM50N-1
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
140 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
84nC @ 10V
Input Capacitance (ciss) @ Vds
2565pF @ 25V
Power - Max
160W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.14 Ohms
Forward Transconductance Gfs (max / Min)
19 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
14 A to 22 A
Power Dissipation
160 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5729
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB25NM50N-1
Manufacturer:
ON
Quantity:
20 000
Part Number:
STB25NM50N-1
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
8/18
Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
vs temperature
characteristics
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
temperature
VDSS
vs temperature
STx25NM50N