STB25NM50N-1 STMicroelectronics, STB25NM50N-1 Datasheet - Page 13
![MOSFET N-CH 500V 22A I2PAK](/photos/1/39/13917/497-i2_pak__to-262_sml.jpg)
STB25NM50N-1
Manufacturer Part Number
STB25NM50N-1
Description
MOSFET N-CH 500V 22A I2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB25NM50N-1.pdf
(18 pages)
Specifications of STB25NM50N-1
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
140 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
84nC @ 10V
Input Capacitance (ciss) @ Vds
2565pF @ 25V
Power - Max
160W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.14 Ohms
Forward Transconductance Gfs (max / Min)
19 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
14 A to 22 A
Power Dissipation
160 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5729
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB25NM50N-1
Manufacturer:
ON
Quantity:
20 000
Part Number:
STB25NM50N-1
Manufacturer:
ST
Quantity:
20 000
STx25NM50N
Dim
A1
b1
c2
e1
L1
L2
A
D
E
b
c
e
L
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
3.50
1.27
Min
10
13
I²PAK (TO-262) mechanical data
mm
Typ
10.40
Max
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
3.93
1.40
14
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
Min
Package mechanical data
inch
Typ
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
Max
13/18