STB25NM50N-1 STMicroelectronics, STB25NM50N-1 Datasheet - Page 6

• Manufacturer Part Number: STB25NM50N-1
• Description: MOSFET N-CH 500V 22A I2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB25NM50N-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 140 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 84nC @ 10V
• Input Capacitance (ciss) @ Vds: 2565pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.14 Ohms
• Forward Transconductance Gfs (max / Min): 19 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 14 A to 22 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5729

Electrical characteristics
2.1
6/18
Figure 2.
Figure 4.
Figure 6.
Electrical characteristics (curves)
Safe operating area for TO-220 /
D²PAK / I²PAK
Safe operating area for TO-220FP
Safe operating area for TO-247
Figure 3.
Figure 5.
Figure 7.
Thermal impedance for TO-220FP
Thermal impedance for TO-247
Thermal impedance for TO-220 /
D²PAK / I²PAK
STx25NM50N