STW12NK80Z STMicroelectronics, STW12NK80Z Datasheet - Page 5

• Manufacturer Part Number: STW12NK80Z
• Description: MOSFET N-CH 800V 10.5A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW12NK80Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 5.25A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 10.5A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 87nC @ 10V
• Input Capacitance (ciss) @ Vds: 2620pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.75 Ohms
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10.5 A
• Power Dissipation: 190 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3256-5

STB12NK80Z - STP12NK80Z - STW12NK80Z
Table 6.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 7.
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
BV
Symbol
Symbol
I
V
SDM
I
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
RRM
I
SD
GSO
Q
SD
t
rr
rr
(2)
(1)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-Source breakdown
voltage
Source drain diode
Gate-source zener diode
Parameter
Parameter
I
I
di/dt = 100A/µs,
V
Igs=±1mA
(Open drain)
SD
SD
DD
=10.5A, V
=10.5A,
Test conditions
Test conditions
=100V, Tj=150°C
GS
=0
Electrical characteristics
Min
Min
30
Typ.
Typ.
18.5
635
5.9
Max
10.5
Max
1.6
42
Unit
Unit
µC
ns
A
A
V
A
V
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