STW12NK80Z STMicroelectronics, STW12NK80Z Datasheet - Page 15

• Manufacturer Part Number: STW12NK80Z
• Description: MOSFET N-CH 800V 10.5A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW12NK80Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 5.25A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 10.5A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 87nC @ 10V
• Input Capacitance (ciss) @ Vds: 2620pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.75 Ohms
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10.5 A
• Power Dissipation: 190 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3256-5

STB12NK80Z - STP12NK80Z - STW12NK80Z
6
Revision history
Table 8.
08-Sep-2005
22-Jun-2004
28-Jan-2005
27-Apr-2007
31-Jul-2006
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Revision history
Revision
2
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Preliminary version
Complete version
Figure 1
The document has been reformatted
Modified Rds(on) value on
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Figure 3
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Changes
Table 4
Revision history
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