STW12NK80Z STMicroelectronics, STW12NK80Z Datasheet - Page 13

• Manufacturer Part Number: STW12NK80Z
• Description: MOSFET N-CH 800V 10.5A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW12NK80Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 5.25A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 10.5A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 87nC @ 10V
• Input Capacitance (ciss) @ Vds: 2620pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.75 Ohms
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10.5 A
• Power Dissipation: 190 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3256-5

STB12NK80Z - STP12NK80Z - STW12NK80Z
DIM.
C2
D1
A1
A2
B2
E1
V2
L2
L3
M
C
D
G
R
A
B
E
L
2.49
0.03
1.14
0.45
1.23
8.95
4.88
1.27
MIN.
4.4
0.7
1.4
2.4
10
15
0º
D
TO-247 MECHANICAL DATA
2
mm.
TYP
8.5
0.4
PAK MECHANICAL DATA
8
15.85
MAX.
2.69
0.23
0.93
1.36
9.35
10.4
5.28
1.75
4.6
1.7
0.6
1.4
3.2
4º
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
0.393
0.192
0.590
0.050
0.055
0.094
MIN.
Package mechanical data
0.315
0.334
0.015
TYP.
inch
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
0.208
0.625
0.055
0.068
0.126
MAX.
1
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