STB25NM60ND STMicroelectronics, STB25NM60ND Datasheet - Page 5

• Manufacturer Part Number: STB25NM60ND
• Description: MOSFET N-CH 600V 21A D2PAK
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STB25NM60ND

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 50V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 21 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 40 ns
• Rise Time: 30 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8473-2

STx25NM60ND
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Symbol
I
V
SDM
I
I
SD
RRM
RRM
I
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt=100 A/µs
(see Figure 20)
I
di/dt=100 A/µs,
T
(see Figure 20)
SD
SD
SD
J
= 150 °C
Test conditions
= 21 A, V
= 21 A, V
= 21 A,V
DD
GS
DD
= 60 V
= 0
= 60 V
Electrical characteristics
Min.
Typ.
160
230
15
19
1
2
Max.
1.3
21
84
Unit
µC
µC
ns
ns
A
A
V
A
A
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