STB25NM60ND STMicroelectronics, STB25NM60ND Datasheet - Page 17

• Manufacturer Part Number: STB25NM60ND
• Description: MOSFET N-CH 600V 21A D2PAK
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STB25NM60ND

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 50V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 21 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 40 ns
• Rise Time: 30 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8473-2

STx25NM60ND
6
Revision history
Table 8.
15-Nov-2007
03-Mar-2009
22-Jan-2008
08-Apr-2008
Date
Document revision history
Revision
1
2
3
4
First release.
Document status promoted from target specification to
preliminary data.
– Updated
– Document status promoted from preliminary data to
Q
g
datasheet.
value has been updated.
Table 3: Thermal data on page
Changes
3;
Revision history
17/18