STB25NM60ND STMicroelectronics, STB25NM60ND Datasheet - Page 12

• Manufacturer Part Number: STB25NM60ND
• Description: MOSFET N-CH 600V 21A D2PAK
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STB25NM60ND

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 50V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 21 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 40 ns
• Rise Time: 30 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8473-2

Package mechanical data
12/18
Dim.
D
G
F
F
L
L
L
L
L
L
D
G
H
A
B
E
F
2
3
4
5
6
7
a i
1
2
1
A
B
H
M
0
0
1
1
4
2
1
4
2
2
2
9
2
1
4 .
7 .
1 .
1 .
9 .
8
5
9
3
. n i
4 .
5 .
5 .
4 .
8 .
9 .
0
Dia
6 .
9 .
5
5
5
5
5
TO-220FP mechanical data
L6
L2
L7
L 3
mm
T
L5
1
y
6
. p
F1
D
L4
F2
7012510_Rev_J
F
E
G1
M
2
1
1
3
1
1
STx25NM60ND
4
2
0
1
5
2
3
9
3
7 .
7 .
0
0
0
6
a
1
6 .
7 .
7 .
5 .
2 .
7 .
6 .
3 .
2 .
4 .
6 .
6 .
4 .
. x
5
0
G