STF13NM60N STMicroelectronics, STF13NM60N Datasheet

MOSFET N-CH 600V 11A TO-220FP

STF13NM60N

Manufacturer Part Number
STF13NM60N
Description
MOSFET N-CH 600V 11A TO-220FP
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheets

Specifications of STF13NM60N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
360 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
790pF @ 50V
Power - Max
25W
Mounting Type
Through Hole
Package / Case
TO-220FP
Transistor Polarity
N Channel
Continuous Drain Current Id
5.5A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
280mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.36 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
11 A
Power Dissipation
25 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8892-5

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Features
Application
Description
This series of devices implements second
generation MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Table 1.
January 2010
STW13NM60N
STD13NM60N
STB13NM60N
STF13NM60N
STP13NM60N
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Switching applications
Type
STW13NM60N
STB13NM60N
STD13NM60N
STF13NM60N
STP13NM60N
Order codes
N-channel 600 V, 0.28 Ω, 11 A MDmesh™ II Power MOSFET
Device summary
STB13NM60N,STD13NM60N,STF13NM60N
(@Tjmax)
650 V
650 V
650 V
650 V
650 V
V
DSS
< 0.36 Ω
< 0.36 Ω
< 0.36 Ω
< 0.36 Ω
< 0.36 Ω
R
max
DS(on)
in D
13NM60N
13NM60N
13NM60N
13NM60N
13NM60N
Marking
2
PAK, DPAK, TO-220FP, TO-220, TO-247
Doc ID 15420 Rev 2
11 A
11 A
11 A
11 A
11 A
I
STP13NM60N,STW13NM60N
D
Figure 1.
TO-220FP
TO-220FP
Packages
TO-247
TO-220
TO-247
D²PAK
DPAK
1
Internal schematic diagram
2
3
1
2
3
DPAK
1
3
Tape and reel
Tape and reel
Packaging
Tube
Tube
Tube
TO-220
D²PAK
www.st.com
1
1
1/19
2
3
3
19

Related parts for STF13NM60N

STF13NM60N Summary of contents

Page 1

... It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes STB13NM60N STD13NM60N STF13NM60N STP13NM60N STW13NM60N January 2010 STP13NM60N,STW13NM60N PAK, DPAK, TO-220FP, TO-220, TO-247 R ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STB/D/F/P/W13NM60N 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed ...

Page 4

Electrical characteristics 2 Electrical characteristics ( °C unless otherwise specified) CASE Table 5. On/off states Symbol Drain-source V (BR)DSS breakdown voltage (1) dv/dt Drain source voltage slope Zero gate voltage I DSS drain current (V Gate-body leakage I ...

Page 5

STB/D/F/P/W13NM60N Table 7. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 and D²PAK Tj=150°C Tc=25°C Sinlge pulse 0.1 0 Figure 4. Safe operating area for TO-247 ...

Page 7

STB/D/F/P/W13NM60N Figure 8. Safe operating area for DPAK Figure 10. Output characteristics Figure 12. Transconductance Figure 9. Thermal impedance for DPAK Figure 11. Transfer characteristics Figure 13. Static drain-source on resistance R DS(on) (Ω 0.30 V 0.28 0.26 ...

Page 8

Electrical characteristics Figure 14. Gate charge vs gate-source voltage Figure 15. Capacitance variations Figure 16. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.10 1.00 0.90 0.80 0.70 -50 - Figure 18. Source-drain diode forward characteristics ...

Page 9

STB/D/F/P/W13NM60N 3 Test circuits Figure 20. Switching times test circuit for resistive load D.U. Figure 22. Test circuit for inductive load switching and diode recovery times ...

Page 10

Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available ...

Page 11

STB/D/F/P/W13NM60N Table 9. TO-220FP mechanical data Dim Dia Figure 26. TO-220FP drawing A Min. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 ...

Page 12

Package mechanical data DIM 12/19 TO-252 (DPAK) mechanical data mm. min. typ 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 ...

Page 13

STB/D/F/P/W13NM60N TO-220 type A mechanical data Dim Min A 4.40 b 0.61 b1 1.14 c 0.48 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 ∅P 3.75 Q ...

Page 14

Package mechanical data Dim ø P ø 14/19 TO-247 Mechanical data mm. Min. Typ ...

Page 15

STB/D/F/P/W13NM60N Dim D2PAK (TO-263) mechanical data m m Min Typ Max ...

Page 16

Packaging mechanical data 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 6 1.5 D1 1.5 E 1.65 F 7.4 K0 2.55 P0 3.9 P1 7.9 ...

Page 17

STB/D/F/P/W13NM60N 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 B0 15.7 D 1.5 D1 1.59 E 1.65 F 11.4 K0 4.8 P0 3.9 P1 11 0.25 W 23.7 TAPE AND ...

Page 18

Revision history 6 Revision history Table 10. Document revision history Date 29-Feb-2009 13-Jan-2010 18/19 Revision 1 First release – Added new package, mechanical data: TO-247 2 – Added new package, mechanical data: D²PAK Doc ID 15420 Rev 2 STB/D/F/P/W13NM60N Changes ...

Page 19

... STB/D/F/P/W13NM60N Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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