STF13NM60N STMicroelectronics, STF13NM60N Datasheet - Page 4

• Manufacturer Part Number: STF13NM60N
• Description: MOSFET N-CH 600V 11A TO-220FP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STF13NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 790pF @ 50V
• Power - Max: 25W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.5A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.36 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 11 A
• Power Dissipation: 25 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8892-5

Electrical characteristics
2
4/19
Electrical characteristics
(T
Table 5.
1. Characteristic value at turn off on inductive load
Table 6.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
dv/dt
R
CASE
V
oss eq.
(BR)DSS
g
I
I
increases from 0 to 80% V
DS(on)
C
GS(th)
C
C
Q
Q
DSS
GSS
R
fs
Q
oss eq.
oss
rss
iss
gs
gd
G
(1)
g
(1)
= 25 °C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
breakdown voltage
Drain source voltage slope
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
DS
GS
= 0)
Doc ID 15420 Rev 2
I
V
V
V
V
V
V
V
V
V
V
V
V
V
(see Figure 21)
f=1 MHz Gate DC Bias=0
Test signal level = 20 mV
open drain
D
DD
GS
DS
DS
GS
DS
GS
GS
GS
GS
DS
DS
DD
= 1 mA, V
=10 V
=480 V, I
=15 V
= Max rating
= Max rating, @125 °C
= ± 20 V
= V
= 10 V, I
= 50 V, f = 1 MHz,
= 0
= 0, V
= 480 V, I
= 10 V,
Test conditions
Test conditions
GS
,
, I
DS
I
D
GS
D
D
D
= 5.5 A
= 0 to 480 V
= 250 µA
D
= 9 A,
= 5.5 A
= 0
= 11 A,
Min. Typ.
600
Min.
STB/D/F/P/W13NM60N
2
-
-
-
-
-
0.28
Typ.
790
135
45
3.6
4.7
3
60
30
15
7
4
oss
when V
Max. Unit
0.36
Max. Unit
0.1
10
1
4
-
-
-
-
-
DS
V/ns
µA
µA
µA
Ω
nC
nC
nC
V
V
pF
pF
pF
pF
Ω
S