STF13NM60N STMicroelectronics, STF13NM60N Datasheet - Page 8

• Manufacturer Part Number: STF13NM60N
• Description: MOSFET N-CH 600V 11A TO-220FP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STF13NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 790pF @ 50V
• Power - Max: 25W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.5A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.36 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 11 A
• Power Dissipation: 25 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8892-5

Electrical characteristics
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Figure 14. Gate charge vs gate-source voltage Figure 15. Capacitance variations
Figure 16. Normalized gate threshold voltage
Figure 18. Source-drain diode forward
(norm)
V
GS(th)
1.00
0.80
0.70
1.10
0.90
(V)
V
1.2
1.0
0.6
0.4
0.8
0.2
SD
-50
0
0
vs temperature
characteristics
-25
10
0
Tj=-50°C
Tj=150°C
20
25
50
30
75
40
100
Tj=25°C
50
T
J
I
(°C)
SD
Doc ID 15420 Rev 2
AM03306v1
AM03309v1
(A)
Figure 17. Normalized on resistance vs
Figure 19. Normalized B
(norm)
(norm)
R
BV
DS(on)
1.07
1.03
0.99
0.97
0.95
1.05
1.01
0.93
DSS
2.1
1.9
1.7
1.5
0.5
1.3
1.1
0.9
0.7
-50
-50
temperature
-25
-25
0
0
25
25
50
VDSS
50
STB/D/F/P/W13NM60N
75
75
vs temperature
100
100
125
T
J
(°C)
T
AM03307v1
AM03308v1
J
(°C)