STV200N55F3 STMicroelectronics, STV200N55F3 Datasheet - Page 5

• Manufacturer Part Number: STV200N55F3
• Description: MOSFET N-CH 55V 200A POWERSO-10
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STV200N55F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 200A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Configuration: Single Quad Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 200 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7028-2

STV200N55F3
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2.
Symbol
Symbol
V
I
t
t
SD
I
d(on)
d(off)
SD
RRM
I
Q
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
SD
t
t
t
rr
r
f
rr
(1)
(2)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
I
I
V
Figure 18
V
R
Figure 13
V
R
Figure 13
SD
SD
DD
DD
DD
G
G
= 4.7 Ω, V
= 120 A, V
= 120 A,di/dt = 100 A/µs
= 4.7 Ω, V
= 35 V, T
= 27.5 V, I
= 27.5 V, I
Test conditions
Test conditions
GS
j
GS
GS
= 150 °C
D
D
= 10 V,
= 60 A
= 10 V,
= 60 A
= 0
Electrical characteristics
Min.
Min.
Typ.
Typ. Max. Unit
150
110
110
3.5
60
25
50
Max. Unit
200
800
1.5
nC
ns
ns
ns
ns
ns
5/12
A
A
V
A