STV200N55F3 STMicroelectronics, STV200N55F3 Datasheet - Page 3

• Manufacturer Part Number: STV200N55F3
• Description: MOSFET N-CH 55V 200A POWERSO-10
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STV200N55F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 200A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Configuration: Single Quad Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 200 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7028-2

STV200N55F3
1
Electrical ratings
Table 2.
1. Current limited by package
2. Pulse width limited by safe operating area
3. This value is rated according to Rthj-c
4.
Table 3.
1. When mounted on 1 inch
Rthj-pcb
Symbol
Rthj-case
P
E
Symbol
I
DM
TOT
I
V
V
AS
T
D
Starting Tj = 25 °C, I
I
T
GS
DS
stg
D
(1)
j
(2)
(4)
(3)
(1)
Drain-source voltage (v
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Single pulse avalanche energy
Storage temperature
Operating junction temperature
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Absolute maximum ratings
Thermal data
D
= 60 A, V
2
FR-4 2 oz Cu
Parameter
Parameter
DD
C
= 25 °C
= 35 V
gs
= 0)
C
C
= 25 °C
= 100 °C
-55 to 175
Value
Value
± 20
200
170
800
300
2.0
1.0
0.5
50
55
Electrical ratings
°C/W
°C/W
W/°C
Unit
Unit
°C
W
V
V
A
A
A
J
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