STW10NK60Z STMicroelectronics, STW10NK60Z Datasheet - Page 9

• Manufacturer Part Number: STW10NK60Z
• Description: MOSFET N-CH 600V 10A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW10NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 1370pF @ 25V
• Power - Max: 156W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.75 Ohms
• Forward Transconductance Gfs (max / Min): 7.8 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 156 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3253-5

STB10NK60Z, STP10NK60Z, STW10NK60Z
Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
Figure 18. Normalized B
vs temperature
characteristics
VDSS
vs temperature
Figure 15. Normalized on resistance vs
Figure 17. Maximum avalanche energy vs
temperature
temperature
Electrical characteristics
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