STW10NK60Z STMicroelectronics, STW10NK60Z Datasheet - Page 16
STW10NK60Z
Manufacturer Part Number
STW10NK60Z
Description
MOSFET N-CH 600V 10A TO-247
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STB10NK60ZT4.pdf
(19 pages)
Specifications of STW10NK60Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
750 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
1370pF @ 25V
Power - Max
156W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.75 Ohms
Forward Transconductance Gfs (max / Min)
7.8 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
10 A
Power Dissipation
156 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3253-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STW10NK60Z
Manufacturer:
ST
Quantity:
15 000
Company:
Part Number:
STW10NK60Z
Manufacturer:
ST
Quantity:
12 500
Part Number:
STW10NK60Z
Manufacturer:
ST
Quantity:
20 000
Package mechanical data
16/19
Dim
A1
D1
E1
V2
b2
e1
L1
L2
c2
J1
A
D
E
H
R
b
e
L
c
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
8.50
4.88
2.49
2.29
1.27
1.30
Min
10
15
0°
D²PAK (TO-263) mechanical data
2.54
mm
Typ
0.4
STB10NK60Z, STP10NK60Z, STW10NK60Z
10.40
15.85
Max
4.60
0.23
0.93
1.70
0.60
1.36
9.35
5.28
2.69
2.79
1.40
1.75
8°
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
0.192
0.590
0.099
0.090
0.051
0.05
Min
0°
0.016
inch
Typ
0.1
0.009
0.067
0.053
0.208
0.106
0.069
0.181
0.037
0.024
0.368
0.409
0.624
0.110
0.055
Max
8°