STW10NK60Z STMicroelectronics, STW10NK60Z Datasheet - Page 13

• Manufacturer Part Number: STW10NK60Z
• Description: MOSFET N-CH 600V 10A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW10NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 1370pF @ 25V
• Power - Max: 156W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.75 Ohms
• Forward Transconductance Gfs (max / Min): 7.8 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 156 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3253-5

STB10NK60Z, STP10NK60Z, STW10NK60Z
Dim.
Dia
G1
F1
F2
L2
L3
L4
L5
L6
L7
G
A
B
D
E
F
H
15.90
Min.
4.40
0.45
0.75
1.15
1.15
4.95
2.40
28.6
9.80
2.5
2.5
2.9
10
9
3
Dia
TO-220FP mechanical data
mm.
Typ
16
10.40
10.60
16.40
Max.
4.60
2.75
0.70
1.00
1.50
1.50
5.20
2.70
30.6
9.30
2.7
3.6
3.2
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
1.126
0.385
0.114
0.626
0.354
0.118
Min.
Package mechanical data
0.630
inch
Typ.
7012510-I
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
1.204
0.417
0.141
0.645
0.366
0.126
Max.
13/19