STP8NK100Z STMicroelectronics, STP8NK100Z Datasheet - Page 5

• Manufacturer Part Number: STP8NK100Z
• Description: MOSFET N-CH 1000V 6.5A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP8NK100Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.85 Ohm @ 3.15A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 102nC @ 10V
• Input Capacitance (ciss) @ Vds: 2180pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 Ohms
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6.5 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5021-5

STF8NK100Z - STP8NK100Z
2.1
Figure 1.
Figure 3.
Figure 5.
Electrical characteristics (curves)
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
Output Characteristics
Figure 2.
Figure 4.
Figure 6.
Thermal Impedance for TO-220
Thermal Impedance for TO-220FP
Transfer Characteristics
2 Electrical characteristics
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