STP8NK100Z STMicroelectronics, STP8NK100Z Datasheet - Page 4

• Manufacturer Part Number: STP8NK100Z
• Description: MOSFET N-CH 1000V 6.5A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP8NK100Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.85 Ohm @ 3.15A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 102nC @ 10V
• Input Capacitance (ciss) @ Vds: 2180pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 Ohms
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6.5 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5021-5

2 Electrical characteristics
Table 6.
Table 7.
Table 8.
(1) Limited only by maximum temperature allowed
(2)I
(3) Pulse width limited by safe operating area
(4) The built-in-back-to-back Zener diodes have specifically been designed to enanche not only the device’s ESD capability, but
(5) C
(6) Pulsed: pulse duartion = 300µs, duty cycle 1.5%
4/13
I
V
SDM
SD
Symbol
Symbol
Symbol
also to make them safely absorb possible voltage is appropriate to archieve an efficient and cost-effective intervention to
protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.
to 80% V
SD
BV
Note
oss eq.
t
t
I
I
d(on)
d(off)
RRM
RRM
I
Q
Q
Note
SD
t
t
t
t
Note
GSO
rr
rr
r
f
6.5 A, di/dt
rr
rr
4
is defined as a constant equivalent capacitance giving the same charging time as C
2
DSS
3
Source drain diode
Gate-source zener diode
Switching times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
FallTime
Gate-Source Breakdown
Voltage
Source-drain Current
Source-drain Current (pulsed)
Forward on Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
200A/µs, V
Parameter
Parameter
Parameter
DS
V
(BR)DSS,
Tj Tjmax
I
I
V
I
V
V
R
(see Figure 18)
V
R
(see Figure 18)
Igs = ± 1mA (Open Drain)
SD
SD
SD
DD
DD
DD
DD
G
G
=6.3A, V
=6.3A, di/dt = 100A/µs,
=6.3A, di/dt = 100A/µs,
=4.7
=4.7
=50 V, Tj=25°C
=50 V, Tj=150°C
=500 V, I
=500 V, I
Test Conditions
Test Conditions
Test Conditions
V
V
GS
GS
GS
D
D
=0
= 3.15 A,
=3.15 A,
=10V
=10V
STF8NK100Z - STP8NK100Z
Min.
Min.
Min.
30
oss
when V
Typ.
Typ.
Typ.
620
840
5.3
7.5
17
18
28
19
59
30
DS
increases from 0
Max.
Max.
Max.
6.5
1.6
26
Unit
Unit
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
V