STP8NK100Z STMicroelectronics, STP8NK100Z Datasheet
STP8NK100Z
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STP8NK100Z Summary of contents
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... IDEAL FOR OFF-LINE POWER SUPPLIES Order codes Sales Type STF8NK100Z STP8NK100Z November 2005 Zener-Protected SuperMESH™ MOSFET 6.5 ANote 6.5 A 160 W Internal schematic diagram revolutionary Marking F8NK100Z P8NK100Z STF8NK100Z STP8NK100Z TO-220 TO-220FP Package Packaging TO-220FP TUBE TO-220 TUBE 3 2 Rev 1 1/13 www.st.com 13 ...
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... I AR Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy E AS (starting Tj= 25°C, I 2/13 = 25° 100° 25° =50V STF8NK100Z - STP8NK100Z Value TO-220 TO-220FP 1000 1000 ± 30 6.5 6.5 4.3 4 160 40 1.28 0.32 4000 4.5 -- 2500 -55 to 150 TO-220 TO-220FP 0 ...
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... STF8NK100Z - STP8NK100Z 2 Electrical characteristics ( °C unless otherwise specified) CASE Table 4. On/off states Symbol Parameter Drain-Source Breakdown V (BR)DSS Voltage Zero Gate Voltage Drain I DSS Current ( Gate Body Leakage Current I GSS ( Gate Threshold Voltage GS(th) Static Drain-Source On R DS(on) Resistance Table 5. Dynamic Symbol ...
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... GS (see Figure 18) Test Conditions I =6.3A =6.3A, di/dt = 100A/µ =50 V, Tj=25° =6.3A, di/dt = 100A/µ =50 V, Tj=150°C DD Test Conditions Igs = ± 1mA (Open Drain Tjmax (BR)DSS, STF8NK100Z - STP8NK100Z Min. Typ. Max. Unit Min. Typ. Max. Unit 6 1.6 V 620 ns 5.3 µ ...
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... STF8NK100Z - STP8NK100Z 2.1 Electrical characteristics (curves) Figure 1. Safe Operating Area for TO-220 Figure 3. Safe Operating Area for TO-220FP Figure 5. Output Characteristics 2 Electrical characteristics Figure 2. Thermal Impedance for TO-220 Figure 4. Thermal Impedance for TO-220FP Figure 6. Transfer Characteristics 5/13 ...
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... Electrical characteristics Figure 7. Transconductance Figure 9. Gate Charge vs Gate-source Volatge Figure 10. Capacitance Variations Figure 11. Normalized Gate Threshold Voltage vs. Temperature 6/13 STF8NK100Z - STP8NK100Z Figure 8. Static Drain-source on Resistance Figure 12. Normalized On Resistance vs. Temperature ...
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... STF8NK100Z - STP8NK100Z Figure 13. Source-drain Diode Forward Characteristics Figure 15. Maximum Avalanche Energy vs Temperature 2 Electrical characteristics Figure 14. Normalized BVDSS vs Temperature 7/13 ...
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... Test circuits 3 Test circuits Figure 16. Switching Times Test Circuit For Resistive Load Figure 18. Test Circuit For Indictive Load Switching and Diode Recovery Times Figure 19. Unclamped Inductive Waveform 8/13 STF8NK100Z - STP8NK100Z Figure 17. Gate Charge Test Circuit Figure 20. Unclamped Inductive Load Test Circuit ...
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... STF8NK100Z - STP8NK100Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...
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... STF8NK100Z - STP8NK100Z inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 0.630 1.204 0.417 0.141 0.645 0.366 0.126 ...
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... STF8NK100Z - STP8NK100Z DIM. MIN. A 4.40 b 0.61 b1 1.15 c 0.49 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 øP 3.75 Q 2.65 TO-220 MECHANICAL DATA mm. TYP MAX. MIN. 4.60 0.173 0.88 0.024 1.70 0.045 0.70 0.019 15.75 0.60 10.40 0.393 2.70 0.094 5.15 ...
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... Revision History 5 Revision History Date Revision 04-Nov-2005 12/13 1 First release STF8NK100Z - STP8NK100Z Changes ...
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... STF8NK100Z - STP8NK100Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...