IRF2204LPBF International Rectifier, IRF2204LPBF Datasheet - Page 7

MOSFET N-CH 40V 170A TO-262

IRF2204LPBF

Manufacturer Part Number
IRF2204LPBF
Description
MOSFET N-CH 40V 170A TO-262
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF2204LPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.6 mOhm @ 130A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
170A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
5890pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
170A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
3.6mohm
Rds(on) Test Voltage Vgs
10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
170 A
Power Dissipation
200 W
Mounting Style
SMD/SMT
Gate Charge Qg
130 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF2204LPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF2204LPBF
Manufacturer:
International Rectifier
Quantity:
135
www.irf.com
1000
100
10
500
400
300
200
100
1
1.0E-07
0
Fig 16. Maximum Avalanche Energy
25
Duty Cycle = Single Pulse
Starting T J , Junction Temperature (°C)
0.01
0.10
0.05
50
Vs. Temperature
1.0E-06
TOP
BOTTOM 10% Duty Cycle
I D = 210A
75
Fig 15. Typical Avalanche Current Vs.Pulsewidth
100
Single Pulse
125
1.0E-05
150
175
tav (sec)
1.0E-04
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. T
Purely a thermal phenomenon and failure occurs at a
not exceeded.
Figures 12a, 12b.
t
D = Duty cycle in avalanche = t
Z
temperature far in excess of T
every part type.
avalanche pulse.
voltage increase during avalanche).
T
av
av =
thJC
D (ave)
jmax
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 15, 16).
= Average power dissipation per single
av
P
) = Transient thermal resistance, see figure 11)
D (ave)
1.0E-03
IRF2204S/LPbF
Allowed avalanche Current vs
avalanche
assuming
avalanche losses
= 1/2 ( 1.3·BV·I
I
E
av
AS (AR)
= 2DT/ [1.3·BV·Z
= P
D (ave)
jmax
pulsewidth,
Tj = 25°C due to
av
av
. This is validated for
·f
1.0E-02
) = DT/ Z
·t
th
av
]
thJC
tav
jmax
1.0E-01
7
is

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