IRF2204LPBF International Rectifier, IRF2204LPBF Datasheet

IRF2204LPBF

Manufacturer Part Number

IRF2204LPBF

Description

MOSFET N-CH 40V 170A TO-262

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF2204LPBF.pdf (11 pages)

Specifications of IRF2204LPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

3.6 mOhm @ 130A, 10V

Drain To Source Voltage (vdss)

40V

Current - Continuous Drain (id) @ 25° C

170A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

200nC @ 10V

Input Capacitance (ciss) @ Vds

5890pF @ 25V

Power - Max

200W

Mounting Type

Through Hole

Package / Case

TO-262-3 (Straight Leads)

Transistor Polarity

N Channel

Continuous Drain Current Id

170A

Drain Source Voltage Vds

40V

On Resistance Rds(on)

3.6mohm

Rds(on) Test Voltage Vgs

10V

Peak Reflow Compatible (260 C)

Yes

Rohs Compliant

Yes

Drain-source Breakdown Voltage

40 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

170 A

Power Dissipation

200 W

Mounting Style

SMD/SMT

Gate Charge Qg

130 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRF2204LPBF

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF2204LPBF

Manufacturer:

International Rectifier

Quantity:

135

Current page: 1 of 11
Download datasheet (324Kb)

Features

Absolute Maximum Ratings

Thermal Resistance

Description

This HEXFET

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of this

design are a 175°C junction operating temperature,

fast switching speed and improved repetitive

avalanche rating. These features combine to make

this design an extremely efficient and reliable device

for use in a wide variety of applications.

Typical Applications

www.irf.com

STG

@ T

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

Industrial Motor Drive

= 25°C

= 100°C

= 25°C

Power MOSFET utilizes the lastest

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy‚

Avalanche Current

Repetitive Avalanche Energy‡

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Junction-to-Case

Junction-to-Ambient

Parameter

@ 10V

See Fig.12a, 12b, 15, 16

Typ.

300 (1.6mm from case )

–––

IRF2204SPbF

IRF2204LPbF

HEXFET

IRF2204SPbF

10 lbf•in (1.1N•m)

-55 to + 175

170†

120†

Max.

850

200

± 20

460

Pak

1.3

Power MOSFET

DS(on)

Max.

0.75

DSS

IRF2204LPbF

= 170A†

TO-262

= 3.6m

= 40V

°C/W

Units

W/°C

°C

Related parts for IRF2204LPBF

IRF2204LPBF Summary of contents

Page 1

... See Fig.12a, 12b, 15 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– ––– ® Power MOSFET V = 40V DSS R = 3.6m DS(on 170A† D Pak TO-262 IRF2204LPbF Units A 850 200 W 1.3 W/°C ± 460 °C Max. Units 0.75 °C/W 40 ...

Page 2

IRF2204S/LPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 1000 5.0V BOTTOM 4.5V 100 4.5V 10 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000.00 100.00 T ...

Page 4

IRF2204S/LPbF 100000 0V, C iss = rss = oss = 10000 Ciss Coss 1000 Crss 100 ...

Page 5

LIMITED BY PACKAGE 150 125 100 100 ° Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 ...

Page 6

IRF2204S/LPbF D.U 20V 0. Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig ...

Page 7

Duty Cycle = Single Pulse 0.01 100 0.05 0. 1.0E-07 1.0E-06 Fig 15. Typical Avalanche Current Vs.Pulsewidth 500 TOP Single Pulse BOTTOM 10% Duty Cycle 210A 400 300 200 100 ...

Page 8

IRF2204S/LPbF D.U.T + ‚ - Driver Gate Drive P.W. D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent 8 + ƒ Period D = Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery ...

Page 9

THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" OR Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing ...

Page 10

IRF2204S/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information E XAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASSE MBLED ON WW 19, 1997 ASSE MBLY LINE "C" OR Notes: 1. ...

Page 11

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION ...

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